IHW30N100T数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

特性 Features

·Best-in-class V ce(sat) and V f for outstanding efficiency
·Lowest switching losses
·Stable temperature behavior
·Soft current turn-off waveforms
·High breakthrough voltage
·Resistance to current spikes over the SOA

应用 Application

  · Induction cooking stoves
· Microwave ovens
· Rice cookers
·Multifunctional printers

简介

IHW30N100T属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IHW30N100T晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。