IHW30N120R5中文资料1200 V、30 A IGBT 分立器件，带反并联二极管，采用 TO-247 封装数据手册Infineon规格书

描述 Description

The 5th generation of reverse conducting 1200 V, 30 A TRENCHSTOP™ 5 IGBTs with monolithically integrated reverse conducting diode in a TO247 package has been optimized for the demanding requirements of Induction Cooking applications. The 30 A RC-H5 devices complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability.

特性 Features

• Switching losses reduced by 20%
• Very low conduction losses
• Reduced turn-on current spike up to 10%
• Tj(max)= 175°C
• Soft current turn-off waveforms for low EMI

优势:
• Increased switching frequency
• Lowest power dissipation
• Better thermal management for higher reliability
• Lower EMI filtering requirements
• Reduced system costs
• Highest reliability against peak current

简介

IHW30N120R5属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IHW30N120R5晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。