丝印：G30H603；Package：PG-TO220-3；High speed switching series third generation

TRENCHSTOP technology offering • very low turn-off energy • low VCEsat • low EMI • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating, halogen-free mould compound, RoHS compliant

文件：2.10965 Mbytes 页数：14 Pages

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英飞凌

Trench and Fieldstop IGBT

DESCRIPTION · Very lowturn-offenergy · Low VCEsat · Maximum junction temperature175℃ · Low EMI APPLICATIONS · Converter swith high switching frequency · Welding converters · Uninterruptible powersupplies

文件：269.93 Kbytes 页数：2 Pages

ISC

无锡固电

LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY

Low Loss IGBT in Trench and Fieldstop technology • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for : - Frequency Converters - Uninterruptible Power Supply • Trench and Fieldstop technology for 600 V application

文件：378.54 Kbytes 页数：12 Pages

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英飞凌

丝印：G30EF5；Package：PG-TO220-3；High speed 5 FAST IGBT in TRENCHSTOP™ 5 technology

FeaturesandBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freel

文件：1.93829 Mbytes 页数：14 Pages

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英飞凌

High speed 5 FAST IGBT in TRENCHSTOP™ 5 technology

FeaturesandBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freel

文件：1.93829 Mbytes 页数：14 Pages

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英飞凌

Low Loss IGBT in TrenchStop and Fieldstop technology

文件：446.85 Kbytes 页数：13 Pages

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英飞凌

Low Loss IGBT in TrenchStop and Fieldstop technology

文件：446.85 Kbytes 页数：13 Pages

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英飞凌

650V IGBT high speed switching series fifth generation

文件：1.9361 Mbytes 页数：14 Pages

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英飞凌

650V IGBT high speed switching series fifth generation

文件：1.93345 Mbytes 页数：14 Pages

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英飞凌

分立式IGBT

英飞凌的新型TRENCHSTOP™5 IGBT 技术在硬开关应用中提供无与伦比的高效性能，重新界定了“业界卓著”IGBT。该新系列是IGBT 创新的一个重大突破，以满足市场未来对高效率的需求。 • 650V 击穿电压\n• 对比英飞凌业界卓著的“HighSpeed 3”系列\n• Qg系数降低2.5倍\n• 开关损耗系数降低2倍\n• VCE (sat)减少了200mV\n• 低COES/EOSS\n• 温和正温度系数VCE (sat)\n• Vf的温度稳定性\n\n优势:\n• 具有出色的效率，降低结温和外壳温度，从而提高设备可靠性\n• 母线电压可提升50V，同时不影响可靠性\n• 更高的功率密度设计;

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英飞凌