丝印：G30H603；Package：PG-TO220-3；High speed switching series third generation

TRENCHSTOP technology offering • very low turn-off energy • low VCEsat • low EMI • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating, halogen-free mould compound, RoHS compliant

文件：2.10965 Mbytes 页数：14 Pages

Infineon

英飞凌

Trench and Fieldstop IGBT

DESCRIPTION · Very lowturn-offenergy · Low VCEsat · Maximum junction temperature175℃ · Low EMI APPLICATIONS · Converter swith high switching frequency · Welding converters · Uninterruptible powersupplies

文件：269.93 Kbytes 页数：2 Pages

ISC

无锡固电

LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY

Low Loss IGBT in Trench and Fieldstop technology • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for : - Frequency Converters - Uninterruptible Power Supply • Trench and Fieldstop technology for 600 V application

文件：378.54 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：G30EF5；Package：PG-TO220-3；High speed 5 FAST IGBT in TRENCHSTOP™ 5 technology

FeaturesandBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freel

文件：1.93829 Mbytes 页数：14 Pages

Infineon

英飞凌

High speed 5 FAST IGBT in TRENCHSTOP™ 5 technology

FeaturesandBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freel

文件：1.93829 Mbytes 页数：14 Pages

Infineon

英飞凌

Low Loss IGBT in TrenchStop and Fieldstop technology

文件：446.85 Kbytes 页数：13 Pages

Infineon

英飞凌

Low Loss IGBT in TrenchStop and Fieldstop technology

文件：446.85 Kbytes 页数：13 Pages

Infineon

英飞凌

650V IGBT high speed switching series fifth generation

文件：1.9361 Mbytes 页数：14 Pages

Infineon

英飞凌

650V IGBT high speed switching series fifth generation

文件：1.93345 Mbytes 页数：14 Pages

Infineon

英飞凌

分立式IGBT

英飞凌的新型TRENCHSTOP™5 IGBT 技术在硬开关应用中提供无与伦比的高效性能，重新界定了“业界卓著”IGBT。该新系列是IGBT 创新的一个重大突破，以满足市场未来对高效率的需求。 • 650V 击穿电压\n• 对比英飞凌业界卓著的“HighSpeed 3”系列\n• Qg系数降低2.5倍\n• 开关损耗系数降低2倍\n• VCE (sat)减少了200mV\n• 低COES/EOSS\n• 温和正温度系数VCE (sat)\n• Vf的温度稳定性\n\n优势:\n• 具有出色的效率，降低结温和外壳温度，从而提高设备可靠性\n• 母线电压可提升50V，同时不影响可靠性\n• 更高的功率密度设计;

Infineon

英飞凌