20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.023Ω, VGS = 10V - rDS(ON) = 0.027Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width C

文件：200.05 Kbytes 页数：10 Pages

Fairchild

仙童半导体

20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.023Ω, VGS = 10V - rDS(ON) = 0.027Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electriecal Models - Spice and SABER Thermal Impedance Models - www.semi.Intersil.com • Peak Current vs Pulse Width

文件：332.58 Kbytes 页数：9 Pages

Intersil

20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET짰 Power MOSFET

文件：282.97 Kbytes 页数：10 Pages

Fairchild

仙童半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：1.09099 Mbytes 页数：4 Pages

Bychip

百域芯