20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：281.34 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：361.17 Kbytes 页数：10 Pages

INTERSIL

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：1.043339 Mbytes 页数：4 Pages

BYCHIP

百域芯

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：1.043369 Mbytes 页数：4 Pages

BYCHIP

百域芯