47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

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Fairchild

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47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the • Logic Level Gate Drive\n• 47A, 30V\n• Ultra Low On-Resistance, rDS(ON) = 0.021Ω\n• Temperature Compensating PSPICE® Model\n• Temperature Compensating SABER© Model\n• Thermal Impedance SPICE Model\n• Thermal Impedance SABER Model\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• Related L;

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47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

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Intersil

47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：287.68 Kbytes 页数：11 Pages

Fairchild

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