14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

General Description The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

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14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

General Description The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

文件：566.6 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

文件：176.05 Kbytes 页数：7 Pages

INTERSIL

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

文件：547.54 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

General Description The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

文件：566.6 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

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瑞萨

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 14A 60W TO263AB

ONSEMI

安森美半导体

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop va • 14A, 600V at TC = 25°C\n• 600V Switching SOA Capability\n• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150°C\n• Short Circuit Rating\n• Low Conduction Loss\n• Hyperfast Anti-Parallel Diode ;

Renesas

瑞萨

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 14A 60W TO263AB

ONSEMI

安森美半导体