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G20N60B3

40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

G20N60B3D

40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconduction lossofabipolartransistor

Intersil

Intersil Corporation

HGTG20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG20N60B3D

40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

HGTG20N60B3D

40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconduction lossofabipolartransistor

Intersil

Intersil Corporation

HGTP20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    HGTG20N60B3D_Q

  • 功能描述:

    IGBT 晶体管 600V IGBT UFS N-Channel

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集电极—发射极最大电压

  • VCEO:

    650 V

  • 集电极—射极饱和电压:

    2.3 V

  • 栅极/发射极最大电压:

    20 V 在25

  • C的连续集电极电流:

    150 A

  • 栅极—射极漏泄电流:

    400 nA

  • 功率耗散:

    187 W

  • 封装/箱体:

    TO-247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHI
24+
TO-247
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
FAIRCHILD
23+
TO-247
50000
全新原装正品现货,支持订货
询价
FAIRCHILD
1932+
TO-247
470
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
FAIRCHILD/仙童
16+
TO-247
1
询价
FAIRCHILD/仙童
24+
TO-3P
47186
郑重承诺只做原装进口现货
询价
FAIRCHILD/仙童
23+
TO247
50000
全新原装正品现货,支持订货
询价
FAIRCHILD
23+
TO-247
28000
原装正品
询价
FAIRCHILD
23+
TO-247
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
FAIRCHILD/仙童
24+
NA/
15638
原装现货,当天可交货,原型号开票
询价
FAIRCHILD
20+
TO-247
271
进口原装现货,假一赔十
询价
更多HGTG20N60B3D_Q供应商 更新时间2025-5-18 22:30:00