7A, 600V, UFS Series N-Channel IGBTs

The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state vo

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7A, 600V, UFS Series N-Channel IGBTs

The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state vo

文件：141.53 Kbytes 页数：7 Pages

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7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop v

文件：154.31 Kbytes 页数：7 Pages

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FAIRCHILD
TO-247

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

上传：深圳市华康联电子科技有限公司（销售一部）

FSC
TO220

FSC

上传：深圳市卓越微芯电子有限公司