6A, 600V, UFS Series N-Channel IGBTs

The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

文件：265.06 Kbytes 页数：7 Pages

Fairchild

仙童半导体

6A, 600V, UFS Series N-Channel IGBTs

The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

文件：243.35 Kbytes 页数：6 Pages

Intersil

6A, 600V, UFS Series N-Channel IGBTs

Description The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v

文件：227.93 Kbytes 页数：9 Pages

HARRIS

6A, 600V, UFS Series N-Channel IGBTs

The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

文件：265.06 Kbytes 页数：7 Pages

Fairchild

仙童半导体

6A, 600V, UFS Series N-Channel IGBTs

ONSEMI

安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 6A 33W TO252AA

ONSEMI

安森美半导体