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HGTD3N60C3S

6A, 600V, UFS Series N-Channel IGBTs

Description TheHGTD3N60C3andHGTD3N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev

HARRIS

HARRIS corporation

HGTD3N60C3S

6A, 600V, UFS Series N-Channel IGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTD3N60C3S

6A, 600V, UFS Series N-Channel IGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTD3N60C3S9A

6A, 600V, UFS Series N-Channel IGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTD3N60C3S9A

包装:管件 封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 6A 33W TO252AA

ONSEMION Semiconductor

安森美半导体安森美半导体公司

HGTD3N60C3

6A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTD3N60C3andHGTD3N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev

HARRIS

HARRIS corporation

HGTP3N60C3

6A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTP3N60C3

6A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP3N60C3D

6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

HARRIS

HARRIS corporation

HGTP3N60C3D

6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

Description TheHGTP3N60C3D,HGT1S3N60C3D,andHGT1S3N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuch

HARRIS

HARRIS corporation

HGTP3N60C3D

6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTP3N60C3D,andHGT1S3N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

详细参数

  • 型号:

    HGTD3N60C3S

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

  • 制造商:

    Harris Corporation

供应商型号品牌批号封装库存备注价格
INTERSIL
23+
TO-252TO-251
12300
全新原装真实库存含13点增值税票!
询价
HARRIS
2017+
TO-252
25899
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
INTERSIL
06+
原厂原装
5132
只做全新原装真实现货供应
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
23+
N/A
90250
正品授权货源可靠
询价
INTERSIL
2019
TO-251-3
55000
原装正品现货假一赔十
询价
INTERSIL
0018+
TO-251-3
450
就找我吧!--邀您体验愉快问购元件!
询价
INTERSIL
23+
TO-252TO-251
10000
公司只做原装正品
询价
INTERSIL
23+
TO-251-3
50000
全新原装正品现货,支持订货
询价
INTERSIL
22+
TO-251-3
6000
十年配单,只做原装
询价
更多HGTD3N60C3S供应商 更新时间2024-5-10 15:30:00