零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
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Low-leakagedualswitchingdiode 1.Generaldescription Epitaxial,medium-speedswitching,electricallyisolateddualdiodeinanultrasmallSOT363 Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowleakagecurrent:maximum5nA •Switchingtime:typical0.8μs •Continuousreversevoltage:maxi | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Low-leakagedualswitchingdiode 1.Generaldescription Epitaxial,medium-speedswitching,electricallyisolateddualdiodeinanultrasmallSOT363 Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowleakagecurrent:maximum5nA •Switchingtime:typical0.8μs •Continuousreversevoltage:maxi | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Lowleakageswitchingdiode | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Lowleakageswitchingdiode 1.1Generaldescription Lowleakageswitchingdiode,encapsulatedinaSOD123Fsmallandflatlead Surface-MountedDevice(SMD)plasticpackage. 1.2Featuresandbenefits SmallandflatleadSMDplasticpackage Lowleakagecurrent Excellentcoplanarityandimprovedthermalbehavior | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
75V,lowleakagediodeinsmallSOD123Fpackage Generaldescription Lowleakageswitchingdiode,encapsulatedinaSOD123FsmallSMDplasticpackage. Features ■SmallandflatleadSMDplasticpackage ■Lowleakagecurrent Applications ■General-purposeswitching | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
SwitchingDiode | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
SwitchingDiode | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
SwitchingDiode(Lowleakage) Features Highreliability Smallmoldtype LowIR Application Generalswitching Structure Epitaxialplanar | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
SwitchingDiode(Lowleakage) Features Highreliability Smallmoldtype LowIR Application Generalswitching Structure Epitaxialplanar | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
Low-leakagediode | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
SwitchingDiode Features •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •Availablein8mmTapeandReel UseBAS116LT1Gtoorderthe7inch/3,000unitreel •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Low-leakagediode 1.Generaldescription Low-leakagediodeinanultrasmallDFN1006BD-2(SOD882BD)leadlessSurface-MountedDevice (SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Switchingtime:max.trr=3μs •Lowleakagecurrent:max.IR=5nA •Repetitivepeakreversevolt | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Low-leakagediode 1.Generaldescription Low-leakagediodeinanultrasmallDFN1006BD-2(SOD882BD)leadlessSurface-MountedDevice (SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Switchingtime:max.trr=3μs •Lowleakagecurrent:max.IR=5nA •Repetitivepeakreversevolt | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Low-leakagediode | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
225mWSMDSwitchingDiode FEATURES -Lowpowerloss,highcurrentcapability,lowVF -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeansgreencompound(halogen-free) MECHANICAL | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
225mW,SMDSwitchingDiode | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
SURFACEMOUNTLOWLEAKAGEDIODE Features •Ultra-SmallSurfaceMountPackage •VeryLowLeakageCurrent •LeadFree/RoHSCompliant(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice(Notes3and4) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
SURFACEMOUNTLOWLEAKAGEDIODE Features ●Ultra-SmallSurfaceMountPackage ●VeryLowLeakageCurrent ●LeadFree/RoHSCompliant(Note2) ●QualifiedtoAEC-Q101StandardsforHighReliability | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
SURFACEMOUNTLOWLEAKAGEDIODE | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
Singlelowleakagecurrentswitchingdiode | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
详细参数
- 型号:
HE116
- 制造商:
BOWEI
- 制造商全称:
BOWEI
- 功能描述:
GaAs SPDT Microwave Switch
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
13 |
16+ |
CSOP |
20 |
原装正品 专营军工 |
询价 | ||
BOWEI |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
13 |
18 |
CSOP |
200 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
CHINA13 |
0627+ |
微波集成电路 |
1 |
现货库存 |
询价 | ||
13 |
21+ |
CSOP |
645 |
航宇科工半导体-央企合格优秀供方! |
询价 | ||
CHINA13 |
0627+ |
微波集成电路 |
1 |
原装现货 实单可谈 |
询价 | ||
N/A |
QQ咨询 |
CSOP |
63 |
全新原装 研究所指定供货商 |
询价 | ||
新 |
5 |
全新原装 货期两周 |
询价 | ||||
2022+ |
1 |
全新原装 货期两周 |
询价 | ||||
N/A |
9616 |
48 |
原装正品长期供货,如假包赔包换 徐小姐13714450367 |
询价 |
相关规格书
更多- HE117A
- HE11RAA100
- HE11RAA101
- HE11-RDA-101-3-C
- HE11RDA1104CT
- HE11RDA-110-4-CT
- HE1206SA
- HE12-10.2-A+
- HE12-10.2-AG
- HE12-1A69_DE
- HE12-1A69-02_DE
- HE12-1A83
- HE12-1A83-02
- HE12-1A83-02_DE
- HE12-1A83-03_10
- HE12-1A83-150
- HE12-1B69-150_DE
- HE12-1B83_DE
- HE12-1B83-03
- HE1220SA
- HE12-561G
- HE125XX51
- HE126XX05
- HE126XX51
- HE12F120
- HE12FA
- HE12FA_08
- HE12FB
- HE12FG
- HE12TDZ.029999
- HE12V12.7FR
- HE13001
- HE13003
- HE13007
- HE13DR
- HE15-9-A+
- HE15-9-AG
- HE15FBTL
- HE15FGTL
- HE15TDZ-019999
- HE162A
- HE162C
- HE164
- HE166
- HE168
相关库存
更多- HE118
- HE11-RAA-100
- HE11-RAA-101
- HE11-RDA-1014
- HE11-RDA-110-4-CT
- HE1203
- HE12-10.2-A
- HE12-10.2-A+G
- HE12-1A69
- HE12-1A69-02
- HE12-1A69-03
- HE12-1A83_DE
- HE12-1A83-02_11
- HE12-1A83-03
- HE12-1A83-03_DE
- HE12-1B69-150
- HE12-1B83
- HE12-1B83-02
- HE12-1B83-150
- HE12-561
- HE125XX50
- HE126XX01
- HE126XX50
- HE126XX52
- HE12F120_07
- HE12FA_07
- HE12FA_10
- HE12FD
- HE12P
- HE12TDZ.069999
- HE12V7.7FR
- HE13002
- HE13005
- HE13009
- HE15-9-A
- HE15-9-A+G
- HE15FATL
- HE15FDTL
- HE15TDZ.029999
- HE16
- HE162B
- HE163
- HE165
- HE167
- HE169