HAT2033R-EL-E规格书批发供应瑞萨RENESAS-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
HAT2033R-EL-E	文件：96.21 Kbytes Page：8 Pages	Silicon N Channel Power MOS FET High Speed Power Switching Features • For Automotive Application (at Type Code “J”) • Low on-resistance • Capable of 4 V gate drive • High density mounting 文件：96.21 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
HAT2033RJ	文件：56.68 Kbytes Page：10 Pages	Silicon N Channel Power MOS FET High Speed Power Switching Features • For Automotive Application ( at Type Code “J “) • Low on-resistance • Capable of 4 V gate drive • High density mounting 文件：56.68 Kbytes 页数：10 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
NTE2033	文件：22.03 Kbytes Page：2 Pages	Integrated Circuit Non-Inverting Transistor Array, Low Input Active Description: The NTE2033 is a non–inverting transistor array, which is comprised of four NPN darlington output stages and PNP input stages. This device is low level input active driver and is suitable for operation with TTL, 5V C–MOS and 5V Microprocessor which have sink current output drivers. 文件：22.03 Kbytes 页数：2 Pages	NTE	NTE
TPS2033D	文件：376.73 Kbytes Page：23 Pages	POWER-DISTRIBUTION SWITCHES 文件：376.73 Kbytes 页数：23 Pages	TI 德州仪器	TI

更多HAT2033R-EL-E供应商更新时间2026-4-20 10:42:00