Silicon N Channel Power MOS FET High Speed Power Switching

Features • For Automotive Application (at Type Code “J”) • Low on-resistance • Capable of 4 V gate drive • High density mounting

文件：96.21 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET High Speed Power Switching

Features • For Automotive Application ( at Type Code “J “) • Low on-resistance • Capable of 4 V gate drive • High density mounting

文件：56.68 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel Power MOS FET High Speed Power Switching

Features • For Automotive Application (at Type Code “J”) • Low on-resistance • Capable of 4 V gate drive • High density mounting

文件：96.21 Kbytes 页数：8 Pages

RENESAS

瑞萨

Integrated Circuit Non-Inverting Transistor Array, Low Input Active

Description: The NTE2033 is a non–inverting transistor array, which is comprised of four NPN darlington output stages and PNP input stages. This device is low level input active driver and is suitable for operation with TTL, 5V C–MOS and 5V Microprocessor which have sink current output drivers.

文件：22.03 Kbytes 页数：2 Pages

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POWER-DISTRIBUTION SWITCHES

文件：376.73 Kbytes 页数：23 Pages

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HF full bridge driver IC

文件：92.85 Kbytes 页数：20 Pages

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PHI