Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting

文件：52.07 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

OUTLINE COUPLER

文件：74.71 Kbytes 页数：1 Pages

IPP

Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=1.55V@IC= 15A · High Current Capability · High Input Impedance · Low thermal resistance APPLICATIONS · Synchronous Rectification in SMPS · Motor Drives · UPS,PFC · General purpose inverter

文件：398.65 Kbytes 页数：6 Pages

ISC

无锡固电

N-channel MOS-FET

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

文件：202.63 Kbytes 页数：2 Pages

FUJI

富士通