Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting

文件：32.87 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

SCHOTTKY BARRIER DIODE

文件：375.82 Kbytes 页数：7 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

SCHOTTKY BARRIER DIODE

APPLICATIONS  High frequency switch power supply  Free wheeling diodes, polarity protection applications FEATURES Common cathode structure Low power loss, high efficiency High Operating Junction Temperature Guard ring for overvoltage protection，High reliability RoHS product

文件：640.33 Kbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

SCHOTTKY BARRIER DIODE

APPLICATIONS  High frequency switch power supply  Free wheeling diodes, polarity protection applications FEATURES Common cathode structure Low power loss, high efficiency High Operating Junction Temperature Guard ring for overvoltage protection，High reliability RoHS product

文件：640.33 Kbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司