Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting

文件：50.54 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel Power MOS FET High Speed Power Switching

HITACHI

日立

OUTLINE COUPLER

文件：75.41 Kbytes 页数：1 Pages

IPP

Trench Field-Stop Technology IGBT

FEATURES · VCE(sat)(typ.)= 1.8V@VGE= 15V, IC= 40A · Low Switching Losses · VCE(sat) with Positive Temperature Coefficient APPLICATIONS · Frequency Converters · Uninterrupted Power Supply · Air Conditioning · Motor Drives

文件：371.22 Kbytes 页数：3 Pages

ISC

无锡固电

I2C Programmable RGB LED Driver with AutoBlinQ™

Features • Ultra low dropout regulated 3-channel current sinks  40mV typ. at 10mA per channel • Programmable LED setting by I2C compatible interface • Individual channel control  On/Off Interval Time Control  Dimming Up/Down Time  RGB LED Color Control • 191 current level setting

文件：741.74 Kbytes 页数：22 Pages

KINETIC

芯凯电子