Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • RDS(on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

文件：89.49 Kbytes 页数：7 Pages

HitachiHitachi Semiconductor

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

文件：54.09 Kbytes 页数：4 Pages

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N-Channel 30-V (D-S) MOSFET

文件：1.62488 Mbytes 页数：7 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

文件：54.09 Kbytes 页数：4 Pages

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Transistors>Switching/MOSFETs

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Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance\n   RDS (on) = 3.8 mΩ typ.\n• Low drive current\n• 4.5 V gate drive device can be driven from 5 V source;

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