Panel Mount

文件：606.48 Kbytes 页数：5 Pages

CRYDOM

500 mW Zener Diode 1.7 to 37.2 Volts

• Low Leakage\n• Low Zener Impedance\n• High Reliability;

MCC

美微科

包装：盒 类别：胶带，粘合剂，材料 胶带分配器 描述：APPLICATOR PERFORM 1\

3M

包装：盒 类别：胶带，粘合剂，材料 胶带分配器 描述：APPLICATOR PERFORM 1\

3M

丝印：H12N65P；Package：TO-220AB；N-Channel MOSFET

■Features Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 38nC(Typ.) Extended Safe Operating Area Lower RDS(ON): 0.67Ω(Typ.) @ VGS=10V 100% Avalanche Te

文件：473.94 Kbytes 页数：7 Pages

HAOHAI

浩海电子

丝印：H12N65F；Package：TO-220FP；N-Channel MOSFET

■Features Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 38nC(Typ.) Extended Safe Operating Area Lower RDS(ON): 0.67Ω(Typ.) @ VGS=10V 100% Avalanche Te

文件：473.94 Kbytes 页数：7 Pages

HAOHAI

浩海电子

丝印：H12N65ANF；Package：TO-220F；650V N-Channel Planar MOSFET

Features RDSON≤ 0.8Ω @ Vgs=10 V, Id= 6A ⚫ UltraLow gate Charge(typical typical42 nC) ⚫ Low Crss (typical typical4.6pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply (  Power Facto

文件：2.21006 Mbytes 页数：11 Pages

SY

顺烨电子

丝印：H12N65ANP；Package：TO-220；650V N-Channel Planar MOSFET

Features RDSON≤ 0.8Ω @ Vgs=10 V, Id= 6A ⚫ UltraLow gate Charge(typical typical42 nC) ⚫ Low Crss (typical typical4.6pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply (  Power Facto

文件：2.21006 Mbytes 页数：11 Pages

SY

顺烨电子

丝印：H12N65ANV；Package：TO-3P；650V N-Channel Planar MOSFET

Features RDSON≤ 0.8Ω @ Vgs=10 V, Id= 6A ⚫ UltraLow gate Charge(typical typical42 nC) ⚫ Low Crss (typical typical4.6pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply (  Power Facto

文件：2.21006 Mbytes 页数：11 Pages

SY

顺烨电子

丝印：H12N65ANW；Package：TO-247；650V N-Channel Planar MOSFET

Features RDSON≤ 0.8Ω @ Vgs=10 V, Id= 6A ⚫ UltraLow gate Charge(typical typical42 nC) ⚫ Low Crss (typical typical4.6pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply (  Power Facto

文件：2.21006 Mbytes 页数：11 Pages

SY

顺烨电子