| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：H12N65ANV；Package：TO-3P；650V N-Channel Planar MOSFET Features RDSON≤ 0.8Ω @ Vgs=10 V, Id= 6A ⚫ UltraLow gate Charge(typical typical42 nC) ⚫ Low Crss (typical typical4.6pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply ( Power Facto 文件：2.21006 Mbytes 页数：11 Pages | SY 顺烨电子 | SY |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HRMICRO/华瑞微 |
24+ |
TO-220F |
5000 |
原装正品保障优势供应 |
询价 |
更多H12N65ANV供应商
更新时间2025-9-21 9:36:00
相关芯片丝印
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