丝印：H12；Package：SOD-323；Single Line Uni-directional Transient Voltage Suppressor

文件：293.28 Kbytes 页数：5 Pages

RECTRON

丽正国际

丝印：H12N65P；Package：TO-220AB；N-Channel MOSFET

■Features Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 38nC(Typ.) Extended Safe Operating Area Lower RDS(ON): 0.67Ω(Typ.) @ VGS=10V 100% Avalanche Te

文件：473.94 Kbytes 页数：7 Pages

HAOHAI

浩海电子

丝印：H12N65F；Package：TO-220FP；N-Channel MOSFET

■Features Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 38nC(Typ.) Extended Safe Operating Area Lower RDS(ON): 0.67Ω(Typ.) @ VGS=10V 100% Avalanche Te

文件：473.94 Kbytes 页数：7 Pages

HAOHAI

浩海电子

丝印：H12N65ANF；Package：TO-220F；650V N-Channel Planar MOSFET

Features RDSON≤ 0.8Ω @ Vgs=10 V, Id= 6A ⚫ UltraLow gate Charge(typical typical42 nC) ⚫ Low Crss (typical typical4.6pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply (  Power Facto

文件：2.21006 Mbytes 页数：11 Pages

SY

顺烨电子

丝印：H12N65ANP；Package：TO-220；650V N-Channel Planar MOSFET

Features RDSON≤ 0.8Ω @ Vgs=10 V, Id= 6A ⚫ UltraLow gate Charge(typical typical42 nC) ⚫ Low Crss (typical typical4.6pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply (  Power Facto

文件：2.21006 Mbytes 页数：11 Pages

SY

顺烨电子

丝印：H12N65ANV；Package：TO-3P；650V N-Channel Planar MOSFET

Features RDSON≤ 0.8Ω @ Vgs=10 V, Id= 6A ⚫ UltraLow gate Charge(typical typical42 nC) ⚫ Low Crss (typical typical4.6pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply (  Power Facto

文件：2.21006 Mbytes 页数：11 Pages

SY

顺烨电子

丝印：H12N65ANW；Package：TO-247；650V N-Channel Planar MOSFET

Features RDSON≤ 0.8Ω @ Vgs=10 V, Id= 6A ⚫ UltraLow gate Charge(typical typical42 nC) ⚫ Low Crss (typical typical4.6pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply (  Power Facto

文件：2.21006 Mbytes 页数：11 Pages

SY

顺烨电子

Loudspeaker System

Key features Full range 2 way 12″ Loudspeaker 원음 Originality를 완벽하게 재생하는 Driver Unit(Eminence) FULL RANGE 스피커 시스템 다양한 각도에서 스피커를 사용하기 위해 Rotatable Horn 적용(90°H x 60°V) Ceiling 및 Wall rigging을 위한 M8 suspension points Applications 중형공간에서의 BGM, Speech를 위한 다목적 스피커 중형급 고정형 설치장소 (교회, 강당, 클럽, 공연장

文件：1.13797 Mbytes 页数：2 Pages

SOVICO

500 mW Zener Diode 1.7 to 37.2 Volts

Features • Low Leakage • Low Zener Impedance • High Reliability

文件：108.27 Kbytes 页数：4 Pages

MCC

6000VDC Isolated 1W Single Output SIP-Package

Features RoHS compliant Efficiency up to 77 6kVDC Isolation Wide temperature performance at full 1 Watt load,-40℃ to 85℃ Single output Internal SMD Construction Continuous short circuit Protection

文件：1.64806 Mbytes 页数：1 Pages

REICU

睿库电子