丝印：GT100N12；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT100N12K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.1114 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N12；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT100N12M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.03618 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N12；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT100N12MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101Qualified Application l Power switch l DC/DC converters

文件：1.03544 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N12；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT100N12T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.04569 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N12；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT100N12TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101Qualified Application l Power switch l DC/DC converters

文件：1.24804 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100P06；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The GT100P06D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：584.3 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The GT100P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：824.12 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The GT100P06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：773.74 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT105N10；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GT105N10F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：708.35 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT105N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT105N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：675.86 Kbytes 页数：6 Pages

GOFORD

谷峰半导体