Highly efficient and reliable single motion crimp termination allows high volume production with semiautomatic equipment.

文件：693.88 Kbytes 页数：20 Pages

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

丝印：GT1；Package：SOT-23；PNP small signal transistor

Small load switch transistor with high gain and Low saturation voltage Features 1) High gain and low saturation voltage. 2) Ideal for small load switching applications. 3) Complements the BCX19.

文件：53.97 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：GT1；Package：SOT-23；NPN small signal transistor

Features 1) High gain and low saturation voltage. 2) Complements the BCX17.

文件：53.79 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：GT1003A；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The GT1003Auses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：919.31 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT1003A；Package：SOT-23-3L；Consumer electronic powersupply

Description The GT1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge.This device is suitable for use in high frequency Synchronous-recification application. AEC-Q101 Qualified Application ●Consumer electronic powersupply ●Isolated DC/DCconverter ●Moto

文件：734.12 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT1003D；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The GT1003D uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application  Power switch DC/DC converters Synchronous Rectification

文件：724.09 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N04；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT100N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：686.32 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N04；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT100N04D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：900.99 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N04；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT100N04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：576.42 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N12；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT100N12D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.043069 Mbytes 页数：6 Pages

GOFORD

谷峰半导体