Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • 10 μs short circuit capability •HEXFRED® antiparallel diodes with ultrasoft reverse recovery •TJmaximum = 150 °C • Fully isolated package • Very low internal inductance (5 nH typical)

文件：177.73 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • 10 μs short circuit capability • HEXFRED® antiparallel diodes with ultrasoft reverse recovery • TJ maximum = 150 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry

文件：176.33 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

Vishay

威世

NPN POWER DARLUNGTON MODULES 100A 1200V

NPN Power Darlungton Modules 100A, 1200V

文件：385.42 Kbytes 页数：4 Pages

SEMIKRON

赛米控丹佛斯

Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • 10 μs short circuit capability • HEXFRED® antiparallel diodes with ultrasoft reverse recovery • TJ maximum = 150 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry

文件：176.33 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Insulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A

FEATURES • Trench IGBT high speed • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: fo

文件：191.07 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司