首页 >VS-GT100DA120UF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
VS-GT100DA120UF | Insulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A FEATURES •TrenchIGBThighspeed •SquareRBSOA •HEXFRED®lowQrr,lowswitchingenergy •PositiveVCE(on)temperaturecoefficient •Fullyisolatedpackage •Verylowinternalinductance(5nHtypical) •Industrystandardoutline •ULapprovedfileE78996 •Materialcategorization:fo | VishayVishay Siliconix 威世科技 | Vishay | |
VS-GT100DA120UF | Insulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A FEATURES •TrenchIGBThighspeed •SquareRBSOA •HEXFRED®lowQrr,lowswitchingenergy •PositiveVCE(on)temperaturecoefficient •Fullyisolatedpackage •Verylowinternalinductance(5nHtypical) •Industrystandardoutline •ULapprovedfileE78996 •Materialcategorization:fo | VishayVishay Siliconix 威世科技 | Vishay | |
VS-GT100DA120UF | 包装：管件 封装/外壳：SOT-227-4，miniBLOC 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：IGBT MOD 1200V 187A 890W SOT227 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | |
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A FEATURES •TrenchIGBThighspeed •SquareRBSOA •HEXFRED®lowQrr,lowswitchingenergy •PositiveVCE(on)temperaturecoefficient •Fullyisolatedpackage •Verylowinternalinductance(5nHtypical) •Industrystandardoutline •ULapprovedfileE78996 •Materialcategorization:fo | VishayVishay Siliconix 威世科技 | Vishay | ||
BoostchopperNPTIGBTPowerModule | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
BoostchopperFastTrenchFieldStopIGBTPowerModule | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
InsulatedGateBipolarTransistor(TrenchIGBT),100A FEATURES •TrenchIGBTtechnologywithpositivetemperaturecoefficient •SquareRBSOA •10μsshortcircuitcapability •HEXFRED®antiparalleldiodeswithultrasoftreverserecovery •TJmaximum=150°C •Fullyisolatedpackage •Verylowinternalinductance(5nHtypical) | VishayVishay Siliconix 威世科技 | Vishay | ||
InsulatedGateBipolarTransistor(TrenchIGBT),100A FEATURES •TrenchIGBTtechnologywithpositive temperaturecoefficient •SquareRBSOA •10μsshortcircuitcapability •HEXFRED®antiparalleldiodeswithultrasoftreverse recovery •TJmaximum=150°C •Fullyisolatedpackage •Verylowinternalinductance(5nHtypical) •Industry | VishayVishay Siliconix 威世科技 | Vishay | ||
NPNPOWERDARLUNGTONMODULES100A1200V NPNPowerDarlungtonModules100A,1200V | SemikronSemikron 赛米控 | Semikron | ||
InsulatedGateBipolarTransistor(TrenchIGBT),100A FEATURES •TrenchIGBTtechnologywithpositive temperaturecoefficient •SquareRBSOA •10μsshortcircuitcapability •HEXFRED®antiparalleldiodeswithultrasoftreverse recovery •TJmaximum=150°C •Fullyisolatedpackage •Verylowinternalinductance(5nHtypical) •Industry | VishayVishay Siliconix 威世科技 | Vishay |
产品属性
- 产品编号：
VS-GT100DA120UF
- 制造商：
Vishay General Semiconductor - Diodes Division
- 类别：
分立半导体产品 > 晶体管 - IGBT - 模块
- 系列：
HEXFRED®
- 包装：
管件
- IGBT 类型：
沟道
- 配置：
单路
- 不同 Vge、Ic 时 Vce(on)（最大值）：
2.55V @ 15V，100A
- 输入：
标准
- NTC 热敏电阻：
无
- 工作温度：
-40°C ~ 150°C（TJ）
- 安装类型：
底座安装
- 封装/外壳：
SOT-227-4，miniBLOC
- 供应商器件封装：
SOT-227
- 描述：
IGBT MOD 1200V 187A 890W SOT227
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - |
23+ |
SOT-227-4,miniBLOC |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
Vishay Semiconductors |
23+ |
Module |
1262 |
原厂原装正品现货,代理渠道,支持订货!!! |
询价 | ||
VISHAY/威世 |
2021+ |
SOT-227 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
Vishay Semiconductor Diodes Di |
2022+ |
SOT-227 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
Vishay General Semiconductor - |
23+ |
标准封装 |
2000 |
全新原装正品现货直销 |
询价 | ||
Vishay Semiconductor Diodes Di |
22+ |
SOT227 |
9000 |
原厂渠道,现货配单 |
询价 | ||
VISHAY |
11+ |
SOT-227 |
160 |
原装正品现货供 |
询价 | ||
VishaySemiconductorDiode |
2019+ |
SOT-227 |
65500 |
原装正品货到付款,价格优势! |
询价 | ||
VISHAY/威世 |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
VISHAY |
最新 |
24463 |
原装正品 现货供应 价格优 |
询价 |
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