首页 >VS-GT300YH120N>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
VS-GT300YH120N | DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology FEATURES •1200VIGBTtrenchandfieldstoptechnology withpositivetemperaturecoefficient •Lowswitchinglosses •Maximumjunctiontemperature175°C •10μsshortcircuitcapability •Lowinductancecase •HEXFRED®antiparallelandseriesdiodeswithsoftreverse recovery •Isolated | VishayVishay Siliconix 威世科技 | Vishay | |
VS-GT300YH120N | DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology FEATURES •1200VIGBTtrenchandfieldstoptechnology withpositivetemperaturecoefficient •Lowswitchinglosses •Maximumjunctiontemperature175°C •10μsshortcircuitcapability •Lowinductancecase •HEXFRED®antiparallelandseriesdiodeswithsoftreverse recovery •Isolated | VishayVishay Siliconix 威世科技 | Vishay | |
VS-GT300YH120N | DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology | VishayVishay Siliconix 威世科技 | Vishay | |
VS-GT300YH120N | 包装：托盘 封装/外壳：双 INT-A-PAK（3 + 8） 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：IGBT MOD 1200V 341A INT-A-PAK | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | |
DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology FEATURES •1200VIGBTtrenchandfieldstoptechnology withpositivetemperaturecoefficient •Lowswitchinglosses •Maximumjunctiontemperature175°C •10μsshortcircuitcapability •Lowinductancecase •HEXFRED®antiparallelandseriesdiodeswithsoftreverse recovery •Isolated | VishayVishay Siliconix 威世科技 | Vishay | ||
DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology FEATURES •1200VIGBTtrenchandfieldstoptechnology withpositivetemperaturecoefficient •Lowswitchinglosses •Maximumjunctiontemperature175°C •10μsshortcircuitcapability •Lowinductancecase •HEXFRED®antiparallelandseriesdiodeswithsoftreverse recovery •Isolated | VishayVishay Siliconix 威世科技 | Vishay |
产品属性
- 产品编号：
VS-GT300YH120N
- 制造商：
Vishay General Semiconductor - Diodes Division
- 类别：
分立半导体产品 > 晶体管 - IGBT - 模块
- 包装：
托盘
- IGBT 类型：
沟道
- 配置：
半桥
- 不同 Vge、Ic 时 Vce(on)（最大值）：
2.17V @ 15V，300A（标准）
- 输入：
标准
- NTC 热敏电阻：
无
- 工作温度：
-40°C ~ 150°C（TJ）
- 安装类型：
底座安装
- 封装/外壳：
双 INT-A-PAK（3 + 8）
- 供应商器件封装：
双 INT-A-PAK
- 描述：
IGBT MOD 1200V 341A INT-A-PAK
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - |
24+ |
双 INT-A-PAK(3 + 8) |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
VISHAY |
1809+ |
A-PAK |
26 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Vishay Semiconductor Diodes Di |
2022+ |
双 INT-A-PAK |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
Vishay General Semiconductor - |
23+ |
标准封装 |
2000 |
全新原装正品现货直销 |
询价 | ||
Vishay General Semiconductor - |
24+ |
双 INT-A-PAK(3 + 8) |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 | ||
Vishay Semiconductor Diodes Di |
22+ |
Double INTAPAK |
9000 |
原厂渠道,现货配单 |
询价 |
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