INT-A-PAK, Half Bridge - Trench IGBT, 200 AS

FEATURES • Trench IGBT • Very low VCE(on) • Positive VCE(on) temperature coefficient • FRED Pt® anti-parallel diode low Qrr and low switching energy • Industry and standard package • TJ = 175 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：218.94 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

INT-A-PAK, Half Bridge - Trench IGBT, 200 A

FEATURES • Trench IGBT • Very low VCE(on) • Positive VCE(on) temperature coefficient • FRED Pt® anti-parallel diode low Qrr and low switching energy • Industry and standard package • TJ = 175 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：219.49 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

INT-A-PAK, Half Bridge - Trench IGBT, 200 A

FEATURES • Trench IGBT • Very low VCE(on) • Positive VCE(on) temperature coefficient • FRED Pt® anti-parallel diode low Qrr and low switching energy • Industry and standard package • TJ = 175 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：219.49 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

INT-A-PAK, Half Bridge-Trench IGBT, 200 A

文件：156.37 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司