Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

FEATURES • Trench IGBT technology with positive temperature coefficient • Speed 4 kHz to 30 kHz • Square RBSOA • 3 μs short circuit capability • FRED Pt® antiparallel diodes with ultrasoft reverse recovery • TJ maximum = 175 °C • Fully isolated package • Very low internal inductance (≤ 5 n

文件：175.71 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • 3 μs short circuit capability • FRED Pt® antiparallel diodes with ultrasoft reverse recovery • TJ maximum = 175 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry

文件：178.1 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • 3 μs short circuit capability • FRED Pt® antiparallel diodes with ultrasoft reverse recovery • TJ maximum = 175 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry

文件：178.1 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

Vishay

威世