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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
10J303	文件：291.57 Kbytes Page：6 Pages	NCHANNELIGBT(HIGHPOWERSWITCHING,MOTORCONTROLAPPLICATIONS) HIGHPOWERSWITCHINGAPPLICATIONS MOTORCONTROLAPPLICATIONS Third-generationIGBT Enhancementmodetype Highspeed:tf=0.30μs(Max.)(IC=10A) Lowsaturationvoltage:VCE(sat)=2.7V(Max.)(IC=10A) FRDincludedbetweenemitterandcollector	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
GT10J303	文件：1.58274 Mbytes Page：73 Pages	BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
GT10J303	文件：291.57 Kbytes Page：6 Pages	NCHANNELIGBT(HIGHPOWERSWITCHING,MOTORCONTROLAPPLICATIONS) HIGHPOWERSWITCHINGAPPLICATIONS MOTORCONTROLAPPLICATIONS Third-generationIGBT Enhancementmodetype Highspeed:tf=0.30μs(Max.)(IC=10A) Lowsaturationvoltage:VCE(sat)=2.7V(Max.)(IC=10A) FRDincludedbetweenemitterandcollector	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
GT10J303	文件：473.68 Kbytes Page：7 Pages	SILICONNCHANNELIGBTHIGHPOWERSWITCHINGAPPLICATIONS	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA

更多GT10J303(Q)供应商更新时间2024-5-16 17:55:00