650 V E-mode GaN transistor

Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 50 mΩ • IDS,max = 30 A / IDSmax,Pulse = 60 A • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • High sw

文件：1.035829 Mbytes 页数：16 Pages

GAN

700 V E-mode GaN transistor Datasheet

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, TOLL package • RDS(on) = 40 mΩ • IDS,max = 40 A / IDSmax,Pulse = 67 A • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • High switching

文件：779.12 Kbytes 页数：16 Pages

GAN

700 V E-mode GaN transistor Datasheet

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, TOLL package • RDS(on) = 40 mΩ • IDS,max = 40 A / IDSmax,Pulse = 67 A • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • High switching

文件：779.12 Kbytes 页数：16 Pages

GAN

700 V E-mode GaN transistor Datasheet

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 37 mΩ • IDS,max = 40 A / IDSmax,Pulse = 67 A • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • High sw

文件：893.34 Kbytes 页数：16 Pages

GAN

丝印：Mini-Reel；Package：8x8-mm-PDFN；700 V E-mode GaN transistor Datasheet

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 37 mΩ • IDS,max = 40 A / IDSmax,Pulse = 67 A • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • High sw

文件：893.34 Kbytes 页数：16 Pages

GAN

丝印：Tape-and-Reel；Package：8x8-mm-PDFN；700 V E-mode GaN transistor Datasheet

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 37 mΩ • IDS,max = 40 A / IDSmax,Pulse = 67 A • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • High sw

文件：893.34 Kbytes 页数：16 Pages

GAN

Automotive 650 V GaN E-mode transistor

Features • AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101) • 650 V enhancement mode power transistor • Bottom-cooled, low inductance GaNPX® package • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 / +10 V) •

文件：1.31887 Mbytes 页数：16 Pages

GAN

Automotive 650 V GaN E-mode transistor

Features • AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101) • 650 V enhancement mode power transistor • Top-cooled, low inductance GaNPX® package • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 / +10 V) • Ve

文件：1.07816 Mbytes 页数：17 Pages

GAN

EXTRACTOR DE SOLDADURA 23mm

Descripción: Ligero, económico y potente. Elimina la soldadura con un fuerte succión. Un manejo cómodo y viene con un eje de auto-limpieza para un fácil mantenimiento.

文件：324.26 Kbytes 页数：2 Pages

AGELECTRONICA

丝印：A1；Package：SOD-123FL；PLASTIC SILICON RECTIFIER

FEATURES ▪For surface mounted applications ▪Low profile package ▪Glass Passivated Chip Juntion ▪Ideal for automated placement ▪Lead free in comply with EU RoHS 2011/65/EU directives

文件：1.60872 Mbytes 页数：3 Pages

SAMYANG

三阳电子