丝印：GS；Package：DSBGA；TPS727 250-mA, Ultralow IQ, Fast Transient Response, RF Low-Dropout Linear Regulator

文件：1.11826 Mbytes 页数：36 Pages

TI

德州仪器

ESTERILIZADOR DE PASAMANOS LED UVC 270-285NM

Descripción general: Esterilizador de pasamanos de escaleras eléctricas, con tecnología LED UVC. Cuenta con doce LEDs UVC con una longitud de onda de 270-285nm y una irradiancia total de alrededor de 45μW/cm2. Aplicaciones:  Esterilización de pasamanos de escaleras eléctricas.

文件：1.23809 Mbytes 页数：5 Pages

AGELECTRONICA

650 V E-mode GaN transistor

Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 450 mΩ • IDSmax,DC = 4 A / IDSmax,Pulse = 7.1 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive

文件：1.06041 Mbytes 页数：16 Pages

GAN

700 V E-mode GaN transistor Datasheet

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 315 mΩ • IDSmax,DC = 4.6 A / IDSmax,Pulse = 7.8 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate driv

文件：786.37 Kbytes 页数：16 Pages

GAN

650 V E-mode GaN transistor

Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 225 mΩ • IDSmax,DC= 8 A / IDSmax,Pulse = 13.5 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive

文件：1.0679 Mbytes 页数：16 Pages

GAN

700 V E-mode GaN transistor Datasheet

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 165 mΩ • IDSmax,DC= 8.8 A / IDSmax,Pulse = 14.8 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate driv

文件：801.44 Kbytes 页数：16 Pages

GAN

700 V E-mode GaN transistor Datasheet

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 165 mΩ • IDSmax,DC= 8.8 A / IDSmax,Pulse = 14.8 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate driv

文件：801.44 Kbytes 页数：16 Pages

GAN

700 V E-mode GaN transistor Datasheet

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 165 mΩ • IDSmax,DC= 8.8 A / IDSmax,Pulse = 14.8 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate driv

文件：801.44 Kbytes 页数：16 Pages

GAN

650 V E-mode GaN transistor

Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 150 mΩ • IDSmax,DC = 11 A / IDSmax,Pulse = 19A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (

文件：1.17235 Mbytes 页数：16 Pages

GAN

650 V E-mode GaN transistor

Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled 8x8 mm PDFN package • RDS(on) = 150 mΩ • IDS,max = 11 A / IDSmax,Pulse = 19A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +

文件：1.0368 Mbytes 页数：16 Pages

GAN