GS

Sealed Ultraminiature Slide Switches

Features/Benefits •UltraminiaturedesignsavesPCBspace •Sealedconstruction,processcompatible withmostPCBwashprocesses •Availableinthru-holeandsurfacemount •Longlifecontactdesign •RoHScompliant

GS00101001

ESTERILIZADOR DE PASAMANOS LED UVC 270-285NM

Descripcióngeneral: Esterilizadordepasamanosdeescaleraseléctricas,contecnologíaLEDUVC. CuentacondoceLEDsUVCconunalongituddeondade270-285nmyunairradianciatotaldealrededorde45μW/cm2. Aplicaciones: Esterilizacióndepasamanosdeescaleraseléctricas.

GS-065-004-1-L

650 V E-mode GaN transistor

Features •650Venhancementmodepowertransistor •850Vtransientdrain-to-sourcevoltage •Bottom-cooled,small5x6mmPDFNpackage •RDS(on)=450mΩ •IDSmax,DC=4A/IDSmax,Pulse=7.1A •Ultra-lowFOM •Simplegatedriverequirements(0Vto6V) •Transienttolerantgatedrive

GS-065-004-6-L

700 V E-mode GaN transistor Datasheet

Features •700Venhancementmodepowertransistor •850Vtransientdrain-to-sourcevoltage •Bottom-cooled,small5x6mmPDFNpackage •RDS(on)=315mΩ •IDSmax,DC=4.6A/IDSmax,Pulse=7.8A •Ultra-lowFOM •Simplegatedriverequirements(0Vto6V) •Transienttolerantgatedriv

GS-065-008-1-L

650 V E-mode GaN transistor

Features •650Venhancementmodepowertransistor •850Vtransientdrain-to-sourcevoltage •Bottom-cooled,small5x6mmPDFNpackage •RDS(on)=225mΩ •IDSmax,DC=8A/IDSmax,Pulse=13.5A •Ultra-lowFOM •Simplegatedriverequirements(0Vto6V) •Transienttolerantgatedrive

GS-065-008-6-L

700 V E-mode GaN transistor Datasheet

Features •700Venhancementmodepowertransistor •850Vtransientdrain-to-sourcevoltage •Bottom-cooled,small5x6mmPDFNpackage •RDS(on)=165mΩ •IDSmax,DC=8.8A/IDSmax,Pulse=14.8A •Ultra-lowFOM •Simplegatedriverequirements(0Vto6V) •Transienttolerantgatedriv

GS-065-008-6-L-MR

700 V E-mode GaN transistor Datasheet

Features •700Venhancementmodepowertransistor •850Vtransientdrain-to-sourcevoltage •Bottom-cooled,small5x6mmPDFNpackage •RDS(on)=165mΩ •IDSmax,DC=8.8A/IDSmax,Pulse=14.8A •Ultra-lowFOM •Simplegatedriverequirements(0Vto6V) •Transienttolerantgatedriv

GS-065-008-6-L-TR

700 V E-mode GaN transistor Datasheet

Features •700Venhancementmodepowertransistor •850Vtransientdrain-to-sourcevoltage •Bottom-cooled,small5x6mmPDFNpackage •RDS(on)=165mΩ •IDSmax,DC=8.8A/IDSmax,Pulse=14.8A •Ultra-lowFOM •Simplegatedriverequirements(0Vto6V) •Transienttolerantgatedriv

GS-065-011-1-L

650 V E-mode GaN transistor

Features •650Venhancementmodepowertransistor •850Vtransientdrain-to-sourcevoltage •Bottom-cooled,small5x6mmPDFNpackage •RDS(on)=150mΩ •IDSmax,DC=11A/IDSmax,Pulse=19A •Ultra-lowFOM •Simplegatedriverequirements(0Vto6V) •Transienttolerantgatedrive(

GS-065-011-2-L

650 V E-mode GaN transistor

Features •650Venhancementmodepowertransistor •850Vtransientdrain-to-sourcevoltage •Bottom-cooled8x8mmPDFNpackage •RDS(on)=150mΩ •IDS,max=11A/IDSmax,Pulse=19A •Ultra-lowFOM •Simplegatedriverequirements(0Vto6V) •Transienttolerantgatedrive(-20V/+