型号：GS-065-030-6-LR-TR；Package：8x8-mm-PDFN；700 V E-mode GaN transistor Datasheet

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 37 mΩ • IDS,max = 40 A / IDSmax,Pulse = 67 A • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • High sw

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GAN

GaN Systems