丝印：GP10NC60HD；Package：TO-220；600 V - 10 A - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recov

文件：771.12 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

丝印：GP10NC60KD；Package：TO-220；10 A, 600 V short-circuit rugged IGBT

Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features  Lowe

文件：1.6576 Mbytes 页数：30 Pages

STMICROELECTRONICS

意法半导体

丝印：GP10NC60S；Package：TO-220；10 A, 600 V fast IGBT

文件：1.27233 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-Channel MOSFET

GreenPower

格瑞宝

N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH TM IGBT

ST

意法半导体

包装：带盒（TB） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURPOSE DO204AL

Vishay General Semiconductor - Diodes Division

包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURPOSE DO204AL

Vishay General Semiconductor - Diodes Division

Package：DO-204AL，DO-41，轴向；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 1.1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division