Glass Passivated Junction Plastic Rectifier

FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets environmental standard MIL-S-19500 • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material c

文件：77.96 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

GLASS PASSIVATED JUNCTION RECTIFIER

Reverse Voltage - 50 to 1600 Volts Forward Current - 1.0 Ampere FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Capable of meeting environmenta

文件：61.77 Kbytes 页数：2 Pages

GE

SINTERED GLASS PASSIVATED JUNCTION RECTIFIER

SINTERED GLASS PASSIVATED JUNCTION RECTIFIER FEATURES * GPRC (Glass Passivated Rectifier Chip) inside * Glass passivated cavity-free junction * Capable of meeting environmental standards of MIL-S-19500 * 1.0 Ampere operation at TA=75oC and 55oC with no thermal runaway * Typical

文件：60.74 Kbytes 页数：2 Pages

ZOWIE

智威

Glass Passivated Junction Rectifiers

Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Capable of meeting environmental standards of MIL-S-19500 • 1.0 Ampere operation at TA = 75°C and 55°C with

文件：30.55 Kbytes 页数：2 Pages

VISHAYVishay Siliconix

威世威世科技公司

Glass Passivated Junction Rectifier

文件：77.3 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

650V/10A Trench and Field Stop IGBT

Features:  650V 10A,VCE(sat)(typ.) = 1.8 V@10A  High ruggedness performance  10μs short circuit capability  Positive VCE (sat) temperature coefficient  High efficiency for motor control  Excellent current sharing in parallel operation  RoHS compliant Applications:  Home appliances

文件：6.84222 Mbytes 页数：8 Pages

LUGUANG

鲁光电子

10 A - 410 V internally clamped IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat

文件：751.46 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH TM IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix S identifies a family optimized achieve minimum on-voltage drop for low frequency a

文件：242.95 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications wit

文件：379.54 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT

文件：387.24 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体