丝印：GC20N65；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GC20N65M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.18706 Mbytes 页数：6 Pages

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谷峰半导体

丝印：GC20N65；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GC20N65Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：717.8 Kbytes 页数：6 Pages

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谷峰半导体

丝印：GC20N65；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GC20N65QD uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：994.03 Kbytes 页数：6 Pages

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谷峰半导体

丝印：GC20N65；Package：TO-220；Power Factor Correction (PFC)

Description The GC20N65T uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. A

文件：2.63286 Mbytes 页数：5 Pages

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谷峰半导体

丝印：GC20N70；Package：TO-220F；Power Factor Correction (PFC)

Description The GC20N70 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap

文件：2.69811 Mbytes 页数：8 Pages

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谷峰半导体

丝印：GC20N70；Package：TO-247；Power Factor Correction (PFC)

Description The GC20N70 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap

文件：2.69811 Mbytes 页数：8 Pages

GOFORD

谷峰半导体

丝印：GC20N70；Package：TO-220；Power Factor Correction (PFC)

Description The GC20N70 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap

文件：2.69811 Mbytes 页数：8 Pages

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谷峰半导体

丝印：GC210N80E；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC210N80FE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：797.68 Kbytes 页数：6 Pages

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谷峰半导体

丝印：GC280N65；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC280N65F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l LCD/LED/PDP TV l Telecom/Server Power supplies l AC-DC Power Supply l LED Lighting

文件：736.96 Kbytes 页数：6 Pages

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谷峰半导体

丝印：GC300N65；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC300N65F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：913.49 Kbytes 页数：6 Pages

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谷峰半导体