丝印：GC；Package：DSBGA；350 mA, Ultra-Low VIN, RF Low-Dropout Linear Regulator With Bias Pin

文件：983.44 Kbytes 页数：28 Pages

TI

德州仪器

丝印：GC；Package：uSiP；TPSM8281x 2.75-V to 6-V Adjustable-Frequency Step-Down Converter with Integrated Inductor

文件：3.0133 Mbytes 页数：39 Pages

TI

德州仪器

丝印：GC030N65F；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GC030N65QF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Solar inverters l LCD/LED/PDP TV l Telecom/Server Power supplies l AC-DC Power Supply

文件：1.00012 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC040N65F；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GC040N65QF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：981 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC041N65F；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GC041N65QF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：990.59 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC060N65F；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GC060N65QF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：981.97 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC080N65F；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GC080N65QF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.04651 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC080N65F；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GC080N65QFA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.19872 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC085N65F；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GC085N65QF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：967.38 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC11N60；Package：TO-220F；Power Factor Correction

Description The GC11N60 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap

文件：4.32953 Mbytes 页数：7 Pages

GOFORD

谷峰半导体