丝印：GC041N65F；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GC041N65QF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：990.59 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

650V N Channel SUPER JUNCTION MOSFET

GOFORD

谷峰半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 76A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 41mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：372.61 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel SuperFET짰 II FRFET짰 MOSFET

Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

文件：1.22332 Mbytes 页数：9 Pages

FAIRCHILD

仙童半导体