丝印：GC040N65F；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GC040N65QF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：981 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

650V N Channel SUPER JUNCTION MOSFET

GOFORD

谷峰半导体

MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 2.85 mA)

文件：479.13 Kbytes 页数：10 Pages

TOSHIBA

东芝

TSSOP16-EP

世芯

上传：深圳市钧敏科技有限公司

SOP-8

GC

上传：深圳市赛尔通科技有限公司