丝印：K040N65Z；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 2.85 mA)

文件：479.13 Kbytes 页数：10 Pages

TOSHIBA

东芝

Power MOSFET (N-ch 500V VDSS 700V)

Application Scope：High efficiency DC/DC converters / Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 57 A \nPower Dissipation PD 360 W \nDrain-Source voltage VDSS 650 V \nGate-Source voltage VGSS +30/-30 V ;

Toshiba

东芝

N-Channel Enhancement Mode Power MOSFET

Description The GC040N65QF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：981 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

TO-220SIS

TOSHIBA/东芝

上传：深圳市鼎欣微电子有限公司

TO-220SIS

TOSHIBA/东芝

上传：深圳市鼎欣微电子有限公司