丝印：GC20N65；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GC20N65QD uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：994.03 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

Planar Mosfet

GOFORD

谷峰半导体

Power Factor Correction (PFC)

Description The GC20N65T uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. A

文件：2.63286 Mbytes 页数：5 Pages

GOFORD

谷峰半导体

650V/20A Field Stop IGBT

Features 650V 20A,VCE(sat)(typ.) = 1.80 V@20A Field Stop IGBT Technology. 10μs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Benefits High Efficiency for Motor Control. Rugged Performance. Excellent Current Sharing in Parallel Operation

文件：1.15266 Mbytes 页数：9 Pages

LUGUANG

鲁光电子

650V/20A Field Stop IGBT

Features ⚫ 650V 20A,VCE(sat)(typ.) = 1.8V ⚫ Field Stop IGBT Technology ⚫ 10μs Short Circuit Capability ⚫ Square RBSOA ⚫ Positive VCE (on) Temperature Coefficient. General Description LGE’s IGBTs offer lower losses and higher energy for application such as motor drive ,UPS, inverter and oth

文件：992.12 Kbytes 页数：9 Pages

LUGUANG

鲁光电子