650V/20A Field Stop IGBT

Features ⚫ 650V 20A,VCE(sat)(typ.) = 1.8V ⚫ Field Stop IGBT Technology ⚫ 10μs Short Circuit Capability ⚫ Square RBSOA ⚫ Positive VCE (on) Temperature Coefficient. General Description LGE’s IGBTs offer lower losses and higher energy for application such as motor drive ,UPS, inverter and oth

文件：992.12 Kbytes 页数：9 Pages

LUGUANG

鲁光电子

the silicon N-channel Enhanced VDMOSFETs

文件：875.53 Kbytes 页数：10 Pages

HMSEMI

华之美半导体

High Efficiency for Motor Control.

文件：1.10334 Mbytes 页数：8 Pages

HMSEMI

华之美半导体

650V N-Channel Planar MOSFET

Features RDSON≤0.42Ω @Vgs=10V, Id=10A Ultra Low gate Charge(typical 73nC) Low Crss (typical 12pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) (P

文件：2.57068 Mbytes 页数：11 Pages

SY

顺烨电子