650V/20A Field Stop IGBT

Features 650V 20A,VCE(sat)(typ.) = 1.80 V@20A Field Stop IGBT Technology. 10μs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Benefits High Efficiency for Motor Control. Rugged Performance. Excellent Current Sharing in Parallel Operation

文件：1.15266 Mbytes 页数：9 Pages

LUGUANG

鲁光电子

650V/20A Field Stop IGBT

Features ⚫ 650V 20A,VCE(sat)(typ.) = 1.8V ⚫ Field Stop IGBT Technology ⚫ 10μs Short Circuit Capability ⚫ Square RBSOA ⚫ Positive VCE (on) Temperature Coefficient. General Description LGE’s IGBTs offer lower losses and higher energy for application such as motor drive ,UPS, inverter and oth

文件：992.12 Kbytes 页数：9 Pages

LUGUANG

鲁光电子

the silicon N-channel Enhanced VDMOSFETs

文件：875.53 Kbytes 页数：10 Pages

HMSEMI

华之美半导体

High Efficiency for Motor Control.

文件：1.10334 Mbytes 页数：8 Pages

HMSEMI

华之美半导体