| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GC20N65Q | 丝印：GC20N65；Package：TO-247；N-Channel Enhancement Mode Power MOSFET Description The GC20N65Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：717.8 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD | |
丝印：GC20N65；Package：TO-247；N-Channel Enhancement Mode Power MOSFET Description The GC20N65QD uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：994.03 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
GC20N65Q | Multi-epi SJ mos | GOFORD 谷峰半导体 | GOFORD | |
Planar Mosfet | GOFORD 谷峰半导体 | GOFORD |
技术参数
- Configuration：
N channel
- VDS(min)：
650V
- Id at 25℃(max)：
20A
- PD(max)：
151W
- Vgs(th)typ(V)：
2.5V-4.5V
- RDS(on)(typ)(@10V)：
150mΩ
- Qg(nC)：
39
- Ciss：
1724
- Crss：
6
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
51000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
Gem-micro(晶群) |
2021+ |
SOT-23-6L |
3499 |
询价 | |||
GEM-MICRO |
23+ |
SOT23-6 |
3000 |
全新原装正品现货,支持订货 |
询价 | ||
GEM-MICRO |
14+ |
SOT23-6 |
3000 |
询价 | |||
GEM-MICRO |
2022+ |
SOT23-6 |
3000 |
原厂原装,假一罚十 |
询价 | ||
GEM-MICRO |
2450+ |
SOT23-6 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
23+ |
TO-92 |
32687 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
24+ |
BGA |
42 |
询价 | ||||
INTEL |
05+ |
原厂原装 |
4239 |
只做全新原装真实现货供应 |
询价 | ||
INTEL |
16+ |
QFP |
2500 |
进口原装现货/价格优势! |
询价 |
更多GC20N65Q供应商
更新时间2025-10-4 11:06:00
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