IRG4BC30F

INSULATEDGATEBIPOLARTRANSISTOR

IRG4BC30FD

FitRate/EquivalentDeviceHours

IRG4BC30FD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

Features •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra-s

IRG4BC30FDPBF

FastCoPack1GBT(VCES=600V,VCE(on)typ.=1.59V,VGE=15V,IC=17A)

FastCoPackIGBT INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythan

IRG4BC30FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRG4BC30FD-S

INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE

Features •Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3. •IGBTco-packagedwithHyperfastFREDdiodesforultral

IRG4BC30FD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE

Features •Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighter. parameterdistributionandhigherefficiencythan Generation3. •IGBTco-packagedwithHyperfastFREDdiodesforultra

IRG4BC30FD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE

IRG4BC30FPBF

FastSpeedIGBTINSULATEDGATEBIPOLARTRANSISTOR

Features •Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage •Lead-Free Benefits •Generatio

IRG4BC30FPBF

INSULATEDGATEBIPOLARTRANSISTOR