IRG4BC30SPBF

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

IRG4BC30SS

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A)

Features •Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRG4BC30S-S

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A)

Features •Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRG4BC30S-S

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A)

Features •Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRG4BC30S-SPBF

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT

Features •Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRG4BC30U

FitRate/EquivalentDeviceHours

IRG4BC30U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features •UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-220ABpackage Benefits •Gener

IRG4BC30UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRG4BC30UD

FitRate/EquivalentDeviceHours

IRG4BC30UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEUltraFastCoPackIGBT

Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra-