丝印：G27；Package：SC-70；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG DESCRIPTION The 2SK3749 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone

文件：237.3 Kbytes 页数：7 Pages

RENESAS

瑞萨

丝印：G27；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：G27D；Package：SOT-89-5；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE

Features • Output Voltage Accuracy: ±1.5 • Output Current: 1A (Min.) • Fold-back Short Current Protection: 50mA • Low Dropout Voltage (3.3V): 450mV (Typ.) @ IOUT=1A • Stable with 4.7μF Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic • Excellent Line Regulation: 0.02/V (Typ.), 0.

文件：597.66 Kbytes 页数：19 Pages

DIODES

美台半导体

丝印：G27G；Package：SOT-89-5；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE

Features • Output Voltage Accuracy: ±1.5 • Output Current: 1A (Min.) • Fold-back Short Current Protection: 50mA • Low Dropout Voltage (3.3V): 450mV (Typ.) @ IOUT=1A • Stable with 4.7μF Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic • Excellent Line Regulation: 0.02/V (Typ.), 0.

文件：597.66 Kbytes 页数：19 Pages

DIODES

美台半导体

丝印：G2755；Package：TSSOP(DA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2755；Package：TSSOP(DA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2755；Package：TSSOP(DA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2755；Package：TSSOP(DA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2755；Package：VQFN(RHA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2755；Package：VQFN(RHA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器