丝印：G23；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2158 is an N-channel vertical type MOS FET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158 is suitable for use in low-voltage portabl

文件：266 Kbytes 页数：8 Pages

RENESAS

瑞萨

丝印：G23；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING The 2SK2158A is an N-channel vertical type MOSFET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158A is suitable for use in lowvoltage portable s

文件：258.839 Kbytes 页数：7 Pages

RENESAS

瑞萨

丝印：G23；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING The 2SK2158A is an N-channel vertical type MOSFET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158A is suitable for use in lowvoltage portable s

文件：258.839 Kbytes 页数：7 Pages

RENESAS

瑞萨

丝印：G23；Package：SMB；25 V, 2 A low drop power Schottky rectifier

Features • Very low forward voltage drop for less power dissipation • Optimized conduction/reverse losses trade-off which means the highest efficiency in the applications • Avalanche rated • ECOPACK2 compliant

文件：326.77 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：G23；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE MOSFET

文件：165.18 Kbytes 页数：6 Pages

DIODES

美台半导体

CMOS Positive Voltage Regulator

Description The G2300 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G2300 is universally used for all commercial-industrial surface mount applications. Features * Low on-resistance * Capable of 2.5V gate drive * Small Package Outl

文件：313.88 Kbytes 页数：4 Pages

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2302 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. Features * Capable of 2.5V gate drive * Small Package Outline

文件：367.57 Kbytes 页数：4 Pages

GTM

勤益投资控股

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2303 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Features • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged Applications • Power Management in Notebook Computer • Portable Equipmen

文件：393.61 Kbytes 页数：4 Pages

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2304 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Features • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged Applications • Power Management in Notebook Computer • Portable Equipmen

文件：390.54 Kbytes 页数：4 Pages

GTM

勤益投资控股

丝印：G2304；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The G2304 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：814.08 Kbytes 页数：6 Pages

GOFORD

谷峰半导体