G2308B

Oblong, Domed, PCB Mount

Oblong,Domed,PCBMount RightAngleViewIndicatorArray TheG23XXBindicatorarrayhasbeenspecificallydesignedforhighdensitypackagingwhilemaintainingvisibility.From4to16LEDsarelocatedon2.54mm(0.1)centers,whichmakesitidealasstatusindicatorswhenusedinconjunctionw

G2308E

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheG2308Eutilizedadvancedprocessingtechniquestoachievethelowestpossibleon-resistance,extremelyefficientandcost-effectivenessdevice. TheSOT-23packageisuniversallyusedforallcommercial-industrialapplications. Features *Capableof2.5Vgatedrive *Loweron-r

G2308S

Oblong, Domed, PCB Mount

Oblong,Domed,PCBMount DirectViewIndicatorArray TheG23XXSindicatorarrayhasbeenspecificallydesignedforhighdensitypackagingwhilemaintainingvisibility.From4to16LEDsarelocatedon2.54mm(0.1)centers,whichmakesitidealasastatusindicatorwhenusedinconjunctionwith

G2309

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS-30V RDS(ON)75m
ID-3.7A Description TheG2309providethedesignerwithbestcombinationoffastswitching,lowon-resistanceandcost-effectiveness.TheG2309isuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplic

G230P06D5

丝印：G230P06；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description TheG230P06D5usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G230P06F

丝印：G230P06；Package：TO-220F；P-Channel Enhancement Mode Power MOSFET

Description TheG230P06Fusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G230P06K

丝印：G230P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description TheG230P06Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G230P06KA

丝印：G230P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description TheG230P06KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

G230P06M

丝印：G230P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description TheG230P06Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G230P06S

丝印：G230P06；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description TheG230P06Susesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters