P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2307 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The G2307 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Applic

文件：389.03 Kbytes 页数：4 Pages

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2308 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2308 is universally used for all commercial-industrial applications. Features * Simple Drive Requirement * Small Package Outline

文件：351.21 Kbytes 页数：4 Pages

GTM

勤益投资控股

Oblong, Domed, PCB Mount

Oblong, Domed, PCB Mount Right Angle View Indicator Array The G23XXB indicator array has been specifically designed for high density packaging while maintaining visibility. From 4 to 16 LEDs are located on 2.54 mm(0.1) centers, which makes it ideal as status indicators when used in conjunction w

文件：27.81 Kbytes 页数：1 Pages

IDEA

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2308E utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. Features * Capable of 2.5V gate drive * Lower on-r

文件：330.26 Kbytes 页数：4 Pages

GTM

勤益投资控股

Oblong, Domed, PCB Mount

Oblong, Domed, PCB Mount Direct View Indicator Array The G23XXS indicator array has been specifically designed for high density packaging while maintaining visibility. From 4 to 16 LEDs are located on 2.54 mm(0.1) centers, which makes it ideal as a status indicator when used in conjunction with

文件：28.36 Kbytes 页数：1 Pages

IDEA

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS -30V RDS(ON) 75m
ID -3.7A Description The G2309 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G2309 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applic

文件：376.81 Kbytes 页数：4 Pages

GTM

勤益投资控股

丝印：G230P06；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G230P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：961.58 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G230P06；Package：TO-220F；P-Channel Enhancement Mode Power MOSFET

Description The G230P06F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：641.54 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G230P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G230P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：624.27 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G230P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G230P06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：918.05 Kbytes 页数：6 Pages

GOFORD

谷峰半导体