G20CT

ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

PRODUCTDESCRIPTION TheGSeriesisalineofminiature,versatilecomponentlevelbuildingblocksthatprovideupto6kV,positiveornegative,inacompactPCmountpackage.Theisolatedoutputisdirectlyproportionaltotheinput,andislinearfromapproximately0.7voltsin.Excellentflter

G20H603

High speed switching series third generation

HighspeedIGBTinTrenchandFieldstoptechnology Features: TRENCHSTOPTMtechnologyoffering •verylowturn-offenergy •lowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating,halogen-freemouldcompound,RoH

G20KW3M

G-Series Power Single-Ended Cordset: Male, angled, 3-pin (2PE), grey body, 230 V AC/DC, 10 A; PVC grey cable, 0.75 mm²

ProductDescription G-SeriesPowerSingle-EndedCordset:Male,angled,3-pin(2+PE),greybody,230VAC/DC,10A;PVCgreycable,0.75mm²

G20N03D2

丝印：G20N03；Package：DFN2X2-6L；N-Channel Enhancement Mode Power MOSFET

Description TheG20N03D2usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application ⚫Powerswitch ⚫DC/DCconverters

G20N03K

丝印：G20N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description TheG20N03Kusesadvancedtrenchtechnologytoprovide excellentR DS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application  Powerswitch DC/DCconverters

G20N06D52

丝印：G20N06；Package：DFN5/6-8LDual；N-Channel Enhancement Mode Power MOSFET

Description TheG20N06D52usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G20N120

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

G20N120

45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETs andbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlos

G20N120

63A, 1200V, NPT Series N-Channel IGBT

63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa

G20N120

34A, 1200V N-Channel IGBT

Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari