G20N120

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

G20N60B3

40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

G20N60B3D

40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

G20N60C3

45A, 600V, UFS Series N-Channel IGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately

G20N60HS

High Speed IGBT in NPT-technology

HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers:   -parallelswitchingcapability   -moderateEoffincreasewithtemperature   -

G20P06K

丝印：G20P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description TheG20P06Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeused inawidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G20P06KA

丝印：G20P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description TheG20P06KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeused inawidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G20P10KE

丝印：G20P10；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description TheG20P10KEusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G20W3FGREY

G-Series Power Field Attachable Connector: Female, angled, 3-pin (2PE), grey body, solder type; 230 V AC/DC, 6 A

ProductDescription G-SeriesPowerFieldAttachableConnector:Female,angled,3-pin(2+PE),greybody,soldertype;230VAC/DC,6A

G2100

Multipurpose Enclosure

EnclosureType:Multipurpose EnclosureMaterial:ABS BodyColour:Grey